View HZU15-1L_105179.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z Rev.3.00 Jul.28.2004
Features
* * * * Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU-L Series Laser Mark Type No. Package Code URP
Pin Arrangement
Cathode mark Mark 1
061
2 1. Cathode 2. Anode
Rev.3.00, Jul.28.2004, page 1 of 6
HZU-L Series
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 150 150 -55 to +150 Unit mW C C
Electrical Characteristics
(Ta = 25C)
Zener Voltage VZ (V)* Type HZU6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU7L A1 A2 A3 B1 B2 B3 C1 C2 HZU9L C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU11L A1 A2 A3 B1 B2 B3 Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7
1
Test Condition IZ (mA) 0.5
Reverse Current Test IR (A) Condition Max 1 VR (V) 2.0
Dynamic Resistance Test rd () Condition Max 150 IZ (mA) 0.5
ESD-Capability (V) *
2
Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1
Min 200
80
0.5
60
0.5
0.5
1
3.5
60
0.5
200
0.5
1
6.0
60
0.5
200
0.5
1
8.0
80
0.5
200
Notes: 1. Tested with DC. 2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Failure criterion ; According to IR spec.
Rev.3.00, Jul.28.2004, page 2 of 6
HZU-L Series
Zener Voltage VZ (V)* Min Max 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 0.5 0.5 0.5 0.5 0.5
1
Reverse Current IR (A) Max 1 Test Condition VR (V) 8.0
Dynamic Resistance rd () Max 80 Test Condition IZ (mA) 0.5
ESD-Capability (V) * Min 200
2
Type HZU11L
Grade C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3
Test Condition IZ (mA) 0.5
HZU12L
0.5
1
10.5
80
0.5
200
HZU15L
-1 -2 -3 -1 -2 -3
1
13.0
80
0.5
200
HZU16L
0.5
1
14.0
80
0.5
200
HZU18L
-1 -2 -3 -1 -2 -3
1
15.0
80
0.5
200
HZU20L
0.5
1
18.0
100
0.5
200
HZU22L
-1 -2 -3 -1 -2 -3
1
20.0
100
0.5
200
HZU24L
0.5
1
22.0
120
0.5
200
HZU27L
-1 -2 -3 -1 -2 -3
1
24.0
150
0.5
200
HZU30L
0.5
1
27.0
200
0.5
200
HZU33L
-1 -2 -3 -1 -2 -3
1
30.0
250
0.5
200
HZU36L
0.5
1
33.0
300
0.5
200
Notes: 1. Tested with DC. 2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Failure criterion ; According to IR spec.
Rev.3.00, Jul.28.2004, page 3 of 6
HZU-L Series
Mark Code
Type HZU6L Grade A1 A2 A3 B1 B2 B3 C1 C2 HZU7L C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZU9L A1 A2 A3 B1 B2 B3 C1 C2 Mark No. 061 062 063 064 065 066 067 068 069 071 072 073 074 075 076 077 078 079 091 092 093 094 095 096 097 098 HZU18L HZU15L HZU12L Type HZU11L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 -1 -2 -3 -1 -2 -3 -1 -2 Mark No. 111 112 113 114 115 116 117 118 119 121 122 123 124 125 126 127 128 129 151 152 153 161 162 163 181 182 HZU36L HZU30L HZU24L Type HZU20L Grade -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 Mark No. 201 202 203 221 222 223 241 242 243 271 272 273 301 302 303 331 332 333 361 362 363
HZU22L
HZU27L
HZU33L
HZU16L
C3 099 -3 183 Notes: 1. Example of Marking (1) HZU6A1L to HZU9C3L Example of Marking (2) HZU11A1L to HZU36-3L Example of Marking
061
HZU6A1L
111
HZU11A1L
2. Type No. is as follows; HZU6A1L, HZU6A2L, *** HZU12C3L 3. Type No. is as follows; HZU15 - 1L, HZU15 - 2L, *** HZU36 - 3L
Rev.3.00, Jul.28.2004, page 4 of 6
HZU-L Series
Main Characteristic
10-2
HZU12B2L
HZU20-2L
10-3
HZU16-2L
HZU24-2L
HZU6B2L
HZU9B2L
HZU30-2L
Zener Current IZ (A)
10-4 10-5 10-6 10-7 10-8
0
5
10
15
20
25
30
35
HZU36-2L
40
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
0.10 0.08 %/C
50 40
250
1.5mm
0.8mm
Zener Voltage Temperature Coefficient Z (%/C)
0.04 mV/C 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5
20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
Power Dissipation Pd (mW)
0.06
30
Zener Voltage Temperature Coefficient Z (mV/C)
200
Cu Foil
150
Printed circuit board 15 x 20 x1.6t mm Material: Glass Epoxy Resin +Cu Foil
100
50
0
0
50
100
150
0.8mm
200
Ambient Temperature Ta (C) Fig.3 Power Dissipation vs. Ambient Temperature
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.3.00, Jul.28.2004, page 5 of 6
HZU-L Series
Package Dimensions
As of January, 2003
Unit: mm
0.3 0.15 0.9 0.15
1.7 0.15 2.5 0.15
0 - 0.10
1.25 0.15
Package Code JEDEC JEITA Mass (reference value)
URP Conforms -- 0.004 g
Rev.3.00, Jul.28.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0

▲Up To Search▲

Price & Availability of HZU15-1L

	To Download HZU15-1L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .